300-GHz InAlN/GaN hemts with ingan back barrier

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1525-1527

  Lee, Dong Seup ^a   Gao, Xiang ^b   Guo, Shiping ^b   Kopp, David ^c   Fay, Patrick ^c   Palacios, Toms ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b IQE INC   (United States)

^c University of Notre Dame   (United States)

Author keywords

Back barrier; Current gain cutoff frequency T; GaN; High electron mobility transistor (HEMT); InAlN; InGaN; Short channel effect (SCE)

Indexed keywords

BACK BARRIER; CURRENT GAIN CUTOFF FREQUENCY T; GAN; INALN; INGAN; SHORT-CHANNEL EFFECT;

CUTOFF FREQUENCY; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80054997749     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2164613     Document Type: Article

References (16)

1. J.W. Chung, T.-W. Kim, and T. Palacios, "Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs," in IEDM Tech. Dig., 2010, pp. 676-679, Paper 30.2.
2. J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, "AlGaN/GaN HEMT with 300-GHz fmax," IEEE Electron Device Lett., vol. 31, no. 3, pp. 195-197, Mar. 2010.
3. J. Kuzmik, "Power electronics on InAlN/(In)GaN: Prospect for a record performance," IEEE Electron Device Lett., vol. 22, no. 11, pp. 510-512, Nov. 2001. (Pubitemid 33106085)
4. M. Higashiwaki, T. Mimura, and T. Matsui, "AlGaN/GaN heterostructure field-effect transistors on 4H-SiC substrates with current-gain cutoff frequency of 190 GHz," Appl. Phys. Exp., vol. 1, no. 2, pp. 021103-1-021103-3, Feb. 2008.
5. T. Zimmermann, D. Deen, Y. Cao, J. Simon, pp. Fay, D. Jena, and H. G. Xing, "AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance," IEEE Electron Device Lett., vol. 29, no. 7, pp. 661-664, Jul. 2008.
6. K. Shinohara, A. Corrion, D. Regan, I. Milosavljevic, D. Brown, S. Burnham, pp. J. Willadsen, C. Butler, A. Schmitz, D. Wheeler, A. Fung, and M. Micovic, "220 GHz fT and 400 GHz fmax in 40-nm GaN DHHEMTs with re-grown Ohmic," in IEDM Tech. Dig., 2010, pp. 672-675, paper 30.1.
7. H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, and C. R. Bolognesi, "205-GHz (Al, In)N/GaN HEMTs," IEEE Electron Device Lett., vol. 31, no. 9, pp. 957-959, Sep. 2010.
8. D. S. Lee, J. W. Chung, H. Wang, X. Gao, S. Guo, pp. Fay, and T. Palacios, "245-GHz InAlN/GaN HEMTs with oxygen plasma treatment," IEEE Electron Device Lett., vol. 32, no. 6, pp. 755-757, Jun. 2011.
9. M. Micovic, pp. Hashimoto, M. Hu, I. Milosavljevic, J. Duvall, pp. J. Willadsen, W.-S. Wong, A. M. Conway, A. Kurdoghlian, pp. W. Deelman, J.-S. Moon, A. Schmitz, and M. J. Delaney, "GaN double heterojunction field effect transistor for microwave and millimeter-wave power applications," in IEDM Tech. Dig., 2004, pp. 807-810. (Pubitemid 40928417)
10. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
11. J. Liu, Y. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, "AlGaN/GaN/ InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement," IEEE Electron Device Lett., vol. 27, no. 1, pp. 10-12, Jan. 2006.
12. D. S. Lee, X. Gao, S. Guo, and T. Palacios, "InAlN/GaN HEMTs with AlGaN back barriers," IEEE Electron Device Lett., vol. 32, no. 5, pp. 617-619, May. 2011.
13. X. Gao, D. Gorka, M. Pan, M. Oliver, S. Guo, D. S. Lee, T. Palacios, pp. Saunier, and A. Ketterson, "Ultra-thin InAlN HEMTs grown with back-barriers," presented at the 9th Int. Conf. Nitride Semiconductors, Glasgow, U.K., Jul. 2011, PB2.05.
14. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, "An improved de-embedding technique for on-wafer high frequency characterization," in Proc. BCTM, 1991, pp. 188-191.
15. N. Moll, M. R. Hueschen, and A. Fischer-Colbrie, "Pulse-doped Al-GaAs/InGaAs pseudomorphic MODFETs," IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 879-896, Jul. 1988.
16. J. A. del Alamo and D.-H. Kim, "Is fT over 1 THz possible?" in Proc. Top. Workshop Heterostruct. Microelectron., Gifu, Japan, Aug. 2009.