High-transconductance GaN MODFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 205-208

  Aktas, O ^a   Kim, W ^a   Fan, Z ^a   Stengel, F ^a   Botchkarev, A ^a   Salvador, A ^a   Sverdlov, B ^a   Mohammad, S N ^a   Morkoc, H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; EPITAXIAL GROWTH; GATES (TRANSISTOR); HALL EFFECT; HETEROJUNCTIONS; NITRIDES; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS; TRANSCONDUCTANCE;

GALLIUM NITRIDE; GATE LENGTH; HALL EFFECT MEASUREMENT; MODFET DEVICES; SATURATION CURRENT; SHEET CARRIER CONCENTRATION; VACUUM DEPOSITION;

FIELD EFFECT TRANSISTORS;

EID: 0029492042     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)