Low frequency noise and screening effects in AlGaN/GaN HEMTs

Electronics Letters

Volumn 34, Issue 24, 1998, Pages 2357-2359

  Garrido, J A ^a   Calle, F ^a   Munoz E ^a   Izpura, I ^a   Sanchez Rojas J L ^a   Li, R ^b   Wang, K L ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON SCATTERING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE; SUBSTRATES;

CHANNEL ELECTRONS; HOOGE PARAMETER; LOW FREQUENCY NOISE; SCREENING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032203868     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981597     Document Type: Article

References (9)

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8. MORRISON, S.R.: '1/f noise from levels in a linear or planar array. III. Trapped carrier fluctuations at dislocations', J. Appl. Phys., 1992. 72, (9), pp. 4104-4112
9. GARRIDO, J.A., et al.: 'Low frequency noise sources in AlGaN/GaN HEMTs'. Proc. Int. Conf. on Quantum 1/f noise and other Low Frequency Fluctuations in Electronic Devices, St. Louis, 1998, (to be published)