High speed and high power AlGaN/GaN MODFETs

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 142-143

  Wu, Y F ^a   Keller, B P ^a   Keller, S ^a   Nguyen, N X ^a   Le, M ^a   Nguyen, C ^a   Jenkins, T J ^a   Kehias, L T ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; GAIN MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CONTINUOUS WAVE POWER DENSITY; MODULATION DEPTH FIELD EFFECT TRANSISTORS (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030682631     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)