MESFETs made from individual GaN nanowires

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 760-765

  Blanchard, Paul T ^a   Bertness, Kris A ^a   Harvey, Todd E ^a   Mansfield, Lorelle M ^a   Sanders, Aric W ^a   Sanford, Norman A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

GaN; MESFETs; Nanowires; Schottky barriers; Schottky diodes

Indexed keywords

DIODES; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; MESFET DEVICES; NANOWIRES; PLATINUM; SEMICONDUCTING GALLIUM; THRESHOLD LOGIC;

GAN; GAN NANOWIRES; IDEALITY FACTORS; MESFETS; ON/OFF CURRENT RATIOS; PINCH OFFS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SCHOTTKY GATES; SUBTHRESHOLD SWINGS; THRESHOLD GATE VOLTAGES;

SCHOTTKY BARRIER DIODES;

EID: 58149231283     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2005492     Document Type: Article

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