Short-channel effect limitations on high-frequency operation of AlGaN/ GaN HEMTs for T-gate devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2589-2597

  Jessen, Greeg H ^a   Fitch Jr , Robert C ^a   Gillespie, James K ^a   Via, Glen ^a   Crespo, Antonio ^a   Langley, Derrick ^a   Denninghoff, Daniel J ^a   Trejo Jr , Manuel ^a   Heller, Eric R ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

AlGaN; GaN; High electron mobility transistor (HEMT); Power; Short channel effect

Indexed keywords

EPITAXIAL LAYERS; FREQUENCY RESPONSE; GALLIUM NITRIDE; SILICON CARBIDE; SILICON NITRIDE;

SHORT-CHANNEL EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 35148856624     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904476     Document Type: Article

References (39)

1. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "A1GaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
2. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "High-power A1GaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005.
3. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
4. Y. Sun and L. Eastman, "Large-signal performance of deep submicrometer A1GaN/A1N/GaN HEMTs with a field-modulating plate," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1689-1692, Aug. 2005.
5. J. Moon, W. Shihchang, D. Wong, I. Milosavljevic, A. Conway, P. Hashimoto, M. Hu, M. Antcliffe, and M. Micovic, "Gate-recessed A1GaN-GaN HEMTs for high-performance millimeter-wave applications," IEEE Electron Device Lett., vol. 26, no. 6, pp. 348-350, Jun. 2005.
6. T. Inoue, Y. Ando, H. Miyamoto, T. Nakayama, Y. Okamoto, K. Hataya, and M. Kuzuhara, "30-GHz-band over 5-W power performance of short-channel A1GaN/GaN heterojunction FETs," IEEE Trans. Microw. Theory Tech., vol. 53, no. 1, pp. 74-80, Jan. 2005.
7. M. Micovic, P. Kurdoghlian, P. Hashimoto, M. Hu, M. Antcliffe, P. J. Willadsen, W. S. Wong, R. Bowen, M. Wetzel, and D. H. Chow, "GaN HEFT for W-band power applications," in IEDM Tech. Dig., San Francisco, CA, Dec. 2006, pp. 1-3.
8. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, "Fabrication of sub-50-nm-gate i-A1GaN/GaN HEMTs on sapphire," Phys. Stat. Sol. (C), no. 7, pp. 2368-2371, Dec. 2006.
9. M. B. Das, "A high aspect ratio design approach to millimeter-wave HEMT structures," IEEE Trans. Electron Devices, vol. ED-32, no. 1, pp. 11-17, Jan. 1985.
10. Y. Awano, M. Kosugi, K. Kosemura, T. Mimura, and M. Abe, "Short-channel effects in subquarter-micrometer-gate HEMTs: Simulation and experiment," IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2260-2266, Oct. 1989.
11. K. Nummila, A. A. Ketterson, S. Caracci, J. Kolodzey, and I. Adesida, "Short-channel effects in sub-100 nm GaAs MESFETs," Electron. Lett. vol. 27, no. 17, pp. 1519-1521, Aug. 15, 1991.
12. J. Kuzmik, T. Lalinsky, Z. Mozolova, and M. Porges, "DC performance of short-channel ion-implanted GaAs MESFETs (the role of gate length shortening)," Solid State Electron., vol. 33, no. 10, pp. 1223-1277, 1990.
13. A. Endoh, Y. Yamashita, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, "Threshold voltage shifts in decananometre-gate A1GaN/GaN HEMTs," Electron. Lett., vol. 42, no. 8, pp. 490-492, Apr. 2006.
14. A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. Dabiran, P. Chow, and I. Adesida, "0.15 μm gate-length A1GaN/GaN HEMTs with varying gate recess length," Solid State Electron., vol. 47, no. 1, pp. 117-122, Jan. 2003.
15. max A1GaN/GaN HFETs achieved by using thin and high-Al-composition A1GaN barrier layers and Cat-CVD SiN passivation," Phys. Stat. Sol. (A), vol. 203, no. 7, pp. 1851-1855, May 2006.
16. J. Gillespie, A. Crespo, R. Fitch, G. Jessen, and G. Via, "A1GaN/GaN ohmic contact resistance variation across epitaxial suppliers," Solid State Electron., vol. 49, no. 4, pp. 670-672, Apr. 2005.
17. K. Shiojima, T. Makimura, T. Suemitsu, and N. Shigekawa, "Effects of epitaxial layer crystal quality on dc and RF characteristics of A1GaN/ GaN short-gate high-electron-mobility transistors on sapphire substrates," Jpn. J. Appl. Phys., vol. 44, no. 12, pp. 8435-8440, Dec. 2005.
18. N. Moll, M. Hueschem, and A. Fischer-Colbrie, "Pulse-doped A1GaAs/ InGaAs pseudomorphic MODFET's," IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 879-886, Jul. 1988.
19. J. Adams, I. Thayne, S. Beaumont, C. Wilkinson, N. Johnson, A. Kean, and C. Stanley, "Carrier transit delays in nanometer-scale GaAs MESFETs," IEEE Electron Device Lett., vol. 14, no. 2, pp. 85-87, Feb. 1993.
20. Y. Wu, M. Singh, and J. Singh, "Device scaling physics and channel velocities in A1GaN/GaN HFETs: Velocities and effective gate length," IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 588-593, Apr. 2006.
21. K. Nummila, A. Ketterson, and I. Adesida, "Delay time analysis for short gate-length GaAs MESFETs," Solid State Electron., vol. 38, no. 2, pp. 517-524, Feb. 1995.
22. O. Breitschadel, L. Kley, H. Grabeldinger, J. T. Hsieh, B. Kuhn, F. Scholz, and H. Schweizer, "Short-channel effects in A1GaN/GaN HEMTs," Mater. Sci. Eng. B, vol. 82, no. 1-3, pp. 238-240, May 22, 2001.
23. T of 110 GHz," Electron. Lett., vol. 36, no. 4, pp. 358-359, Feb. 17, 2000.
24. K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki, and H. Yokoyama, "Effect of epitaxial layer crystal quality on dc and RF characteristics of A1GaN/GaN short-gate HEMTs," Phys. Stat. Sol. (C), vol. 3, no. 6, pp. 2360-2363, Jun. 2006.
25. T of 163 GHz using Cat-CVD SiN gate-insulating and passivation layers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 16-18, Jan. 2006.
26. M. J. Uren, K. J. Nash, R. S. Balmer, T. Martin, E. Morvan, N. Caillas, S. L. Delage, D. Ducatteau, B. Grimbert, and J. C. De Jaeger, "Punch-through in short-channel A1GaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 395-398, Feb. 2006.
27. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, "Undoped A1GaN/GaN HEMTs for microwave power amplification," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 479-485, Mar. 2001.
28. M. Higashiwaki and T. Matsui, "A1GaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates," Jpn. J. Appl. Phys., vol. 44, no. 16, pp. L475-L478, 2005.
29. T and low microwave noise," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 581-584, Mar. 2001.
30. C. Oxley and M. Uren, "Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor," IEEE Trans. Electron Devices, vol. 52, no. 2, pp. 165-169, Feb. 2005.
31. V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. A. Khan, and I. Adesida, "High performance 0.25 μm gate-length A1GaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz," Solid State Electron., vol. 47, no. 9, pp. 1577-1580, Sep. 2003.
32. A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, and U. K. Mishra, "2.1 A/mm current density A1GaN/GaN HEMT," Electron. Lett., vol. 39, no. 7, pp. 625-626, Apr. 2003.
33. A. Ping, Q. Chen, J. Yang, M. A. Khan, and I. Adesida, "DC and microwave performance of high-current A1GaN/GaN heterostructure field effect transistors grown on p-type SiC substrates," IEEE Electron Device Lett., vol. 19, no. 2, pp. 54-56, Feb. 1998.
34. M. Akita, S. Kishimoto, K. Maezawa, and T. Mizutani, "Evaluation of effective electron velocity in A1GaN/GaN HEMTs," Electron. Lett., vol. 36, no. 20, pp. 1736-1737, Sep. 2000.
35. M. Shur and R. Gaska, "Physics of GaN-based heterostructure field effect transistors," in Proc. IEEE Compound Semicond. Integr. Circuit Symp. Tech. Dig., 2005, pp. 137-139.
36. T. Suemitsu, K. Shiojima, T. Makimura, and N. Shigekawa, "Intrinsic transit delay and effective electron velocity of A1GaN/GaN high electron mobility transistors," Jpn. J. Appl. Phys., vol. 44, no. 6, pp. L211-L213, 2005.
37. J. Barker, D. Ferry, D. Koleske, and R. Shul, "Bulk GaN and A1GaN/GaN heterostructure drift velocity measurements and comparison to theoretical models," J. Appl. Phys., vol. 97, no. 6, pp. 063 705.1-063 705.5, Mar. 2005.
38. T. Yu and K. Brennan, "Monte Carlo calculation of two-dimensional electron dynamics in GaN-A1GaN heterostructures," J. Appl. Phys., vol. 91, no. 6, pp. 3730-3736, Mar. 2002.
39. T. Ide, M. Shimizu, A. Nakajima, M. Inada, S. Yahi, G. Piao, Y. Yano, N. Akutsu, H. Okumura, and K. Arai, "Gate-length dependence of dc characteristics in submicron-gate A1GaN/GaN high electron mobility transistors," Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2334-2337, 2007.