Electrostatics of nanowire transistors with triangular cross sections

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Vashaee, Daryoosh ^a   Shakouri, All ^a   Goldberger, Joshua ^b   Kuykendall, Tevye ^b   Pauzauskie, Peter ^b   Yang, Peidong ^b  

^a University of California Santa Cruz   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE CAPACITANCE; GATE OXIDE THICKNESS; GATE VOLTAGE; NANOWIRE TRANSISTORS;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTROSTATICS; OHMIC CONTACTS; POISSON EQUATION; PROBLEM SOLVING;

FIELD EFFECT TRANSISTORS;

EID: 33645211346     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168229     Document Type: Article

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