Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 794-796

  Nidhi, ^a   Dasgupta, Sansaptak ^a   Lu, Jing ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Contact regrowth; InAlN barrier; InGaN contact; InN contact; metal insulator semiconductor high electron mobility transistor (MIS HEMT); N polar GaN; self aligned HEMT

Indexed keywords

CONTACT LAYERS; DC PERFORMANCE; EXTRINSIC TRANSCONDUCTANCE; GATE LENGTH; INALN BARRIER; LOW-OHMIC CONTACT; LOWEST R; METAL-INSULATOR-SEMICONDUCTORS; N-POLAR; SELF-ALIGNED; STATE-OF-THE-ART PERFORMANCE;

GALLIUM NITRIDE; MIS DEVICES; OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84861717371     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2190965     Document Type: Article

References (11)

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