Design, fabrication and characterization of GaN-based HFET's

Advanced Workshop on Frontiers in Electronics, Proceedings, WOFE

Volumn , Issue , 1997, Pages 3-6

  Eastman, Lester F ^a   Chu, Kenneth ^a   Burm, Jin Wook ^a   Schaff, William J ^a   Murphy, Michael ^a   Weimann, Nils ^a  

^a Cornell Univ ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; MICROWAVE AMPLIFIERS; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030655067     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)