Design of high-aspect-ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High f max

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 785-787

  Denninghoff, Daniel J ^a   Dasgupta, Sansaptak ^a,b   Lu, Jing ^a   Keller, Stacia ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

GaN; high electron mobility transistors (HEMTs); maximum oscillation frequency; nitrogen polar (N polar); ohmic regrowth

Indexed keywords

GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MAXIMUM OSCILLATION FREQUENCY; N-POLAR; OHMIC REGROWTH;

ASPECT RATIO; DESIGN; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; MOS DEVICES; OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84861685322     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191134     Document Type: Article

References (13)

1. K. Shinohara, A. Corrion, D. Regan, I. Milosavljevic, D. Brown, S. Burnham, P. J. Willadsen, C. Butler, A. Schmitz, D. Wheeler, A. Fung, and M. Micovic, "220 GHz fT and 400 GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic," in IEDM Tech. Dig., San Francisco, CA, Dec. 2010, pp. 30.1.1-30.1.4.
2. K. Shinohara, D. Regan, A. Corrion, D. Brown, S. Burnham, P. J. Willadsen, I. Alvarado-Rodriguez, M. Cunningham, C. Butler, A. Schmitz, S. Kim, B. Holden, D. Chang, V. Lee, A. Ohoka, P. M. Asbeck, and M. Micovic, "Deeply-scaled Self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency," in IEDM Tech. Dig., Washington, DC, Dec. 2011, pp. 19.1.1-19.1.4.
3. D. J. Denninghoff, S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design," in Proc. Device Res. Conf. Dig., Santa Barbara, CA, Jun. 2011, pp. 269-270.
4. Nidhi, S. Dasgupta, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN MIS-HEMT with 275 GHz fT," IEEE Electron Device Lett., to be published.
5. S. Dasgupta, Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth," Appl. Phys. Lett., vol. 96, no. 14, pp. 143 504-1-143 504-3, Apr. 2010.
6. P. S. Park and S. Rajan, "Simulation of short-channel Effects in N-and Ga-polar AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 58, no. 3, pp. 704-708, Mar. 2011.
7. Nidhi, S. Dasgupta, D. F. Brown, J. Speck, and U. K. Mishra, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz," in Proc. Device Res. Conf. Dig., Santa Barbara, CA, Jun. 2011, pp. 141-142.
8. G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. Via, A. Crespo, D. Langley, D. J. Denninghoff, M. Trejo, and E. Heller, "Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2589-2597, Oct. 2007. (Pubitemid 47541871)
9. Nidhi, S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with stateof-the-art fT-Lg product of 16.8 GHz-μm," in IEDM Tech. Dig., Washington, DC, Dec. 2009, pp. 1-3.
10. S. Rajan, A. Chini, M. H. Wong, J. Speck, and U. K. Mishra, "N-polar GaN/AlGaN/GaN high electron mobility transistors," J. Appl. Phys., vol. 102, no. 4, pp. 044501-1-044501-6, Aug. 2007.
11. Nidhi, S. Dasgupta, D. F. Brown, U. Singisetti, S. Keller, J. Speck, and U. K. Mishra, "Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs," IEEE Electron Device Lett., vol. 32, no. 1, pp. 33-35, Jan. 2011.
12. T. Palacios, E. Snow, Y. Pei, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications," in IEDM Tech. Dig.,Washington DC, Dec. 2005, pp. 787-789. (Pubitemid 46370968)
13. M. Koolen, J. Geelen, and M. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," in Proc. IEEE Bipolar Circuits Technol. Meeting, Sep. 1991, pp. 188-191.