InAlN/GaN HEMTs with AlGaN back barriers

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 617-619

  Lee, Dong Seup ^a   Gao, Xiang ^b   Guo, Shiping ^b   Palacios, Toms ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b IQE INC   (United States)

Author keywords

AlGaN back barrier; current gain cutoff frequency (fT ); drain induced barrier lowering (DIBL); GaN; highelectron mobility transistor (HEMT); InAlN; output resistance

Indexed keywords

ALGAN; CURRENT GAIN CUTOFF FREQUENCY; DRAIN-INDUCED BARRIER LOWERING (DIBL); GAN; INALN; OUTPUT RESISTANCE;

CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955534584     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2111352     Document Type: Article

References (14)

1. J. Kuzmik, "Power electronics on InAlN/(In)GaN: Prospect for a record performance," IEEE Electron Device Lett., vol. 22, no. 11, pp. 510-512, Nov. 2001. (Pubitemid 33106085)
2. H. Wang, J. Chung, X. Gao, S. Guo, and T. Palacios, " Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance," Phys. Stat. Sol. (C), vol. 7, no. 10, pp. 2440-2444, Oct. 2010.
3. R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing, "Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-mS/mm transconductance," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1383-1385, Dec. 2010.
4. H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, and C. R. Bolognesi, "205-GHz (Al, In)N/GaN HEMTs," IEEE Electron Device Lett., vol. 31, no. 9, pp. 957-959, Sep. 2010.
5. D. S. Lee, J. W. Chung, H. Wang, X. Gao, S. Guo, P. Fay, and T. Palacios, "245 GHz InAlN/GaN HEMTs with oxygen plasma treatment," IEEE Electron Device Lett., submitted for publication.
6. J. Kuzmik, G. Pozzovivo, C. Ostermaier, G. Strasser, D. Pogany, E. Gornik, J.-F. Carlin, M. Gonschorek, E. Feltin, and N. Grandjean, "Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors," Jpn. J. Appl. Phys., vol. 106, no. 12, p. 124 503, Dec. 2009.
7. F. Medjdoub, J. F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, C. Gaquiere, N. Grandjean, and E. Kohn, "Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?" in IEDM Tech. Dig., 2006, pp. 927-930.
8. F. Medjdoub, M. Alomari, J.-F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, and E. Kohn, "Barrier-layer scaling of InAlN/GaN HEMTs," IEEE Electron Device Lett., vol. 29, no. 5, pp. 422-425, May 2008. (Pubitemid 351676299)
9. M. Micovic, P. Hashimoto, M. Hu, I. Milosavljevic, J. Duvall, P. J. Willadsen, W.-S. Wong, A. M. Conway, A. Kurdoghlian, P. W. Deelman, J.-S. Moon, A. Schmitz, and M. J. Delaney, "GaN double heterojunction field effect transistor for microwave and millimeterwaver power applications," in IEDM Tech. Dig., 2004, pp. 807-810. (Pubitemid 40928417)
10. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
11. J. Liu, Y. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, "AlGaN/ GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement," IEEE Electron Device Lett., vol. 27, no. 1, pp. 10-12, Jan. 2006.
12. J.W. Chung, T.-W. Kim, and T. Palacios, "Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs," in IEDM Tech. Dig., 2010, pp. 676-679, Paper 30.2.
13. D. Guerra, R. Akis, F. A. Marino, D. K. Ferry, S. M. Goodnick, and M. Saraniti, "Aspect ratio impact on RF and DC performance of state-ofthe-art short-channel GaN and InGaAs HEMTs," IEEE Electron Device Lett., vol. 31, no. 11, pp. 1217-1219, Nov. 2010.
14. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, "An improved de-embedding technique for on-wafer high frequency characterization," in Proc. BCTM, 1991, pp. 188-191.