Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction

Journal of Applied Physics

Volumn 113, Issue 9, 2013, Pages

  Guo, Pengfei ^a   Yang, Yue ^a   Cheng, Yuanbing ^b   Han, Genquan ^a   Pan, Jisheng ^b   Ivana, ^a   Zhang, Zheng ^b   Hu, Hailong ^c   Shen, Ze Xiang ^c   Chia, Ching Kean ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; GATE LENGTH; GATE-LAST PROCESS; GE EPITAXIAL GROWTH; GE LAYERS; GENERATION-RECOMBINATION; GERMANIUMS (GE); HIGH QUALITY; HIGH RESOLUTION; OFF-STATE LEAKAGE CURRENT; ON STATE; SHOCKLEY-READ-HALL; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE; TRANSFER CHARACTERISTICS; TRAP ASSISTED TUNNELING; TUNNELING CURRENT; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING JUNCTIONS; VALENCE BAND OFFSETS;

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM; GERMANIUM; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTRONS; TEMPERATURE DISTRIBUTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 84874767773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794010     Document Type: Article

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