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Volumn 31, Issue 6, 2010, Pages 564-566
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Temperature-dependent I-V characteristics of a vertical In 0.53Ga0.47 tunnel FET
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Author keywords
InGaAs; Temperature; Traps; Tunnel field effect transistors (TFETs); Vertical
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Indexed keywords
BAND TO BAND TUNNELING;
CURRENT TRANSPORT;
DEVICE OPERATIONS;
DIELECTRIC INTERFACE;
DIFFUSION LIMITED;
DRAIN BIAS;
GAP STATE;
GATE VOLTAGES;
GENERATION-RECOMBINATION;
INGAAS;
REVERSE BIAS;
SHOCKLEY-READ-HALL;
SUBTHRESHOLD SLOPE;
TEMPERATURE DEPENDENCE;
TEMPERATURE DEPENDENT;
TEMPERATURE DEPENDENT I-V CHARACTERISTICS;
THERMAL EMISSIONS;
TRAPS;
TUNNEL FET;
ELECTRON MOBILITY;
GALLIUM;
GATES (TRANSISTOR);
SEMICONDUCTING INDIUM;
TUNNELING (EXCAVATION);
FIELD EFFECT TRANSISTORS;
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EID: 77953025738
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/LED.2010.2045631 Document Type: Article |
Times cited : (214)
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References (11)
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