Temperature-dependent I-V characteristics of a vertical In 0.53Ga0.47 tunnel FET

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 564-566

  Mookerjea, Saurabh ^a   Mohata, Dheeraj ^a   Mayer, Theresa ^a   Narayanan, Vijay ^a   Datta, Suman ^a  

^a The Center for Nanotechnology Education and Utilization   (United States)

Author keywords

InGaAs; Temperature; Traps; Tunnel field effect transistors (TFETs); Vertical

Indexed keywords

BAND TO BAND TUNNELING; CURRENT TRANSPORT; DEVICE OPERATIONS; DIELECTRIC INTERFACE; DIFFUSION LIMITED; DRAIN BIAS; GAP STATE; GATE VOLTAGES; GENERATION-RECOMBINATION; INGAAS; REVERSE BIAS; SHOCKLEY-READ-HALL; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; THERMAL EMISSIONS; TRAPS; TUNNEL FET;

ELECTRON MOBILITY; GALLIUM; GATES (TRANSISTOR); SEMICONDUCTING INDIUM; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 77953025738     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045631     Document Type: Article

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