Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes

Nano Letters

Volumn 11, Issue 10, 2011, Pages 4195-4199

  Bessire, Cedric D ^a   Björk, Mikael T ^a   Schmid, Heinz ^a   Schenk, Andreas ^b   Reuter, Kathleen B ^c   Riel, Heike ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

diode; dislocations; heterojunction; Nanowire; traps; tunneling

Indexed keywords

DEFECTS; DIODES; DISLOCATIONS (CRYSTALS); ELECTRON TUNNELING; ENERGY GAP; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM ARSENIDE; LATTICE MISMATCH; NANOWIRES; SILICON COMPOUNDS; TUNNEL DIODES;

ELECTRICAL CHARACTERIZATION; HIGH-QUALITY INTERFACE; LARGE CURRENT DENSITY; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK TO VALLEY CURRENT RATIO; PHONON ASSISTED TUNNELING; TRAP ASSISTED TUNNELING; TRAPS;

ARSENIC COMPOUNDS;

EID: 80054049436     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202103a     Document Type: Article

References (18)

1. Esaki, L. Phys. Rev. 1958, 109, 603
2. Chang, L.; Frank, D.; Montoye, R. K.; Koester, S. J.; Ji, B. L.; Coteus, P. W.; Dennard, R. H.; Haensch, W. Proc. IEEE 2010, 98, 215
3. Choi, W. Y.; Park, B.-G.; Lee, J. D.; King, Lu, T.-J. IEEE Electron Device Lett. 2007, 28, 743
4. Verhulst, A. S.; Vandenberghe, W. G.; Maex, K.; De Gendt, S.; Heyns, M. M.; Groeseneken, G. IEEE Electron Device Lett. 2008, 29, 1398
5. Björk, M. T.; Ohlsson, B. J.; Sass, T.; Persson, A. I.; Thelander, C.; Magnusson, M. H.; Deppert, K.; Wallenberg, L. R.; Samuelson, L. Appl. Phys. Lett. 2002, 80, 1058
6. Björk, M. T.; Schmid, H.; Bessire, C. D.; Moselund, K. E.; Ghoneim, H.; Karg, S.; Lörtscher, E.; Riel, H. Appl. Phys. Lett. 2010, 97, 163501
7. Chynoweth, A. G.; Feldmann, W. L.; Logan, R. A. Phys. Rev. 1961, 121 (3) 684
8. Schenk, A. Solid-State Electron. 1992, 35 (11) 1585
9. Tomioka, K.; Motohisa, J.; Hara, S.; Fukui, T. Nano Lett. 2008, 8 (10) 3475
10. Shockley, W. Phys. Rev. 1953, 91, 228
11. Read, W. T. Philos. Mag. 1954, 45 (367) 775
12. Sah, C. T. Phys. Rev. 1961, 123 (5) 1594
13. Chynoweth, A. G.; Logan, R. A.; Thomas, D. E. Phys. Rev. 1962, 125 (3) 877
14. Schenk, A.; Rhyner, R.; Luisier, M.; Bessire, C. Analysis of Si, InAs, and Si-InAs Tunnel Diodes and Tunnel FETs Using Different Transport Models. Proc. Int. Conf. SISPAD 2011, not supplied.
15. Sentaurus Device User Guide, version 2009.06; Synopsys, Inc.: Mountain View, California, 2009.
16. Mookerjea, S.; Mohata, D.; Mayer, T.; Narayanan, V.; Datta, S. IEEE Electron Device Lett. 2010, 31 (6) 564
17. Ertekin, E.; Greaney, P. A.; Chrzan, D. C.; Sands, T. D. J. Appl. Phys. 2005, 97, 114325
18. Tomioka, K; Fukui, T. Appl. Phys. Lett. 2011, 98, 083114