Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 634-636

  Han, Genquan ^a   Su, Shaojian ^b   Zhou, Qian ^a   Guo, Pengfei ^a   Yang, Yue ^a   Zhan, Chunlei ^a   Wang, Lanxiang ^a   Wang, Wei ^a   Wang, Qiming ^b   Xue, Chunlai ^b   Cheng, Buwen ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Contact resistance R C; Dopant segregation (DS); Germanium tin (Ge 1 xSn x); Ni(Ge 1 xSn x)

Indexed keywords

BORON-DOPED; CONTACT FORMATION; DOPANT SEGREGATION; GERMANIUM-TIN (GE 1-XSN X); NICKEL GERMANIDE; P-MOSFETS; SOURCE AND DRAINS;

CONTACT RESISTANCE; DOPING (ADDITIVES); MOSFET DEVICES; NICKEL; NICKEL COMPOUNDS; TIN;

GERMANIUM;

EID: 84862777093     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2186430     Document Type: Article

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