Tunnel field-effect transistor without gate-drain overlap

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Verhulst, Anne S ^a   Vandenberghe, William G ^b   Maex, Karen ^b   Groeseneken, Guido ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; NANOWIRES;

GATE STRUCTURES; PROCESSING COMPLEXITY; SUBTHRESHOLD;

MOSFET DEVICES;

EID: 34547697110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2757593     Document Type: Article

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