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Volumn 108, Issue 5, 2010, Pages

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

(8) Fang, Lina Wei Wei a Zhang, Zheng b Zhao, Rong c Pan, Jisheng b Li, Minghua c Shi, Luping c Chong, Tow Chong a,c Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c DATA STORAGE INSTITUTE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND GAPS; CHARGE NEUTRALITY LEVEL; DIELECTRIC CONSTANTS; EFFECTIVE WORK FUNCTION; FERMI LEVEL PINNING; HOLE BARRIER; IN-PHASE; IN-VACUUM; MATERIALS PARAMETERS; NITROGEN-DOPED; NITROGEN-DOPED FILMS; NITROGEN-DOPING; PHYSICAL ANALYSIS; SLOPE PARAMETER; VALENCE BAND EDGES;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRON AFFINITY; GERMANIUM; NITROGEN; PHASE CHANGE MEMORY; SILICON COMPOUNDS; VACUUM; WORK FUNCTION;

TELLURIUM COMPOUNDS;

EID: 77956865725 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3475721 Document Type: Article

Times cited : (10)

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