Direct and indirect band-to-band tunneling in germanium-based TFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 292-301

  Kao, Kuo Hsing ^a,b   Verhulst, Anne S ^a   Vandenberghe, William G ^a,b   Soree, Bart ^a,c   Groeseneken, Guido ^a,b   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Direct tunneling; field induced quantum confinement (FIQC); germanium (Ge); silicon germanium (SiGe); tunnel field effect transistor (TFET)

Indexed keywords

BACK-OF-THE-ENVELOPE CALCULATIONS; BAND TO BAND TUNNELING; CONDUCTION BAND EDGE; DIRECT TRANSITION; DIRECT TUNNELING; ENERGY DIFFERENCES; FIELD-INDUCED QUANTUM CONFINEMENT (FIQC); GENERATION RATE; INDIRECT BAND GAP; MODELING AND SIMULATION; MOLE FRACTION; ROOM TEMPERATURE; SILICON-GERMANIUM (SIGE); TCAD SIMULATION; TUNNEL FET; UNIFORM ELECTRIC FIELDS;

COMPUTER SIMULATION; ELECTRIC FIELDS; ENERGY GAP; MESFET DEVICES; QUANTUM CONFINEMENT;

GERMANIUM;

EID: 84856295372     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2175228     Document Type: Article

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