SCOPUS 정보 검색 플랫폼

Volumn 103, Issue 10, 2008, Pages

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

(4) Toh, Eng Huat a Wang, Grace Huiqi a Samudra, Ganesh a Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRON TUNNELING; LOGIC GATES;

DEVICE PHYSICS; DRAIN ENGINEERING; GERMANIUM TUNNELING FIELD-EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 44649141884 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2924413 Document Type: Article

Times cited : (179)

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