Vertical tunnel field-effect transistor

IEEE Transactions on Electron Devices

Volumn 51, Issue 2, 2004, Pages 279-282

  Bhuwalka, Krishna Kumar ^a   Sedlmaier, Stefan ^a   Ludsteck, Alexandra Katharina ^a   Tolksdorf, Carolin ^a   Schulze, Joerg ^a   Eisele, Ignaz ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Band to band tunneling; Gated p i n diode; Vertical tunnel field effect transistor on silicon; Zener tunneling

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRON TUNNELING; ETCHING; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

BAND TO BAND TUNNELING; GATED PIN DIODE; VERTICAL TUNNEL FIELD EFFECT TRANSISTOR; ZENER TUNNELING;

MOSFET DEVICES;

EID: 0442279707     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821575     Document Type: Article

References (8)

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