InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 2, 2012, Pages 389-392

  Li, Rui ^a   Lu, Yeqing ^a   Chae, Soo Doo ^a   Zhou, Guangle ^a   Liu, Qingmin ^a   Chen, Chen ^b   Shahriar Rahman, M ^a   Vasen, Tim ^a   Zhang, Qin ^a   Fay, Patrick ^a   Kosel, Tom ^a   Wistey, Mark ^a   Xing, Huili Grace ^a   Koswatta, Siyuranga ^c   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

^b SAINT MARY'S COLLEGE   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

GaSb; Heterojunction; InAs; TFET; Tunnel FET; Tunneling

Indexed keywords

FORWARD BIAS; GASB; GATE FIELD; IN-LINE; INAS; INAS/ALGASB; INTERFACE TRAPS; NEGATIVE DIFFERENTIAL RESISTANCES; ON CURRENTS; OXIDE/SEMICONDUCTOR INTERFACES; ROOM TEMPERATURE; SUBTHRESHOLD SWING; TFET; TUNNEL FET;

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GALLIUM; HETEROJUNCTIONS; INDIUM ARSENIDE; TRANSPORT PROPERTIES; TUNNEL JUNCTIONS;

TRANSISTORS;

EID: 84862907979     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100241     Document Type: Article

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