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Volumn 98, Issue 9, 2011, Pages

High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

(12) Jakomin, R a De Kersauson, M b El Kurdi, M b Largeau, L a Mauguin, O a Beaudoin, G a Sauvage, S b Ossikovski, R c Ndong, G c Chaigneau, M c Sagnes, I a Boucaud, P b

a UNIV PARIS SUD (France)

b CNRS (France)

c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; DIRECT BAND GAP; GERMANIUM FILMS; HIGH QUALITY; ISOBUTYL; METALORGANIC CHEMICAL VAPOR DEPOSITION; N-DOPED; ROOM TEMPERATURE;

BUFFER LAYERS; DEPOSITION; ENERGY GAP; GERMANIUM; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 79952384284 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3559231 Document Type: Article

Times cited : (61)

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