InGaAs tunneling field-effect-transistors with atomic-layer-deposited gate oxides

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2990-2995

  Zhao, H ^a   Chen, Y ^a   Wang, Y ^a   Zhou, F ^a   Xue, F ^a   Lee, J ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Al2O3; atomic layer deposition (ALD); band to band tunneling; HfO2; InGaAs; low Vdd; low power; tunneling field effect transistors (TFETs)

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); BAND TO BAND TUNNELING; HFO2; INGAAS; LOW POWER; LOW VDD;

ATOMIC LAYER DEPOSITION; ATOMS; GALLIUM; GATES (TRANSISTOR); HAFNIUM OXIDES; MOS DEVICES; SEMICONDUCTING INDIUM; TUNNEL DIODES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 80052089905     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2159385     Document Type: Article

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