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Volumn 33, Issue 6, 2010, Pages 77-87

Strain engineering and junction design for tunnel field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; GERMANIUM COMPOUNDS; HETEROJUNCTIONS; TUNNEL FIELD EFFECT TRANSISTORS;

EID: 79952681095     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487536     Document Type: Conference Paper
Times cited : (13)

References (31)
  • 28
    • 50549156338 scopus 로고
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    • E. O. Kane, J. Phys. Chem. Solids, vol. 12, n. 2, pp. 181-188, Jan. 1960.
    • (1960) J. Phys. Chem. Solids , vol.12 , Issue.2 , pp. 181-188
    • Kane, E.O.1
  • 31
    • 77952964118 scopus 로고    scopus 로고
    • P. F. Guo, et al., Electronics Lett. 46, n. 11, pp. 786-787, 2010.
    • (2010) Electronics Lett. , vol.46 , Issue.11 , pp. 786-787
    • Guo, P.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.