A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs

Journal of the Electrochemical Society

Volumn 159, Issue 5, 2012, Pages

  Zhang, Xingui ^a   Ivana, ^a   Guo, Hua Xin ^a   Gong, Xiao ^a   Zhou, Qian ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

4-POINT PROBE; COMPREHENSIVE STUDIES; CONTACT TECHNOLOGIES; ELECTRICAL CHARACTERISTIC; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; LOW RESISTIVITY; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NI FILMS; NMOSFETS; RESISTANCE MAPPING; SECONDARY ION MASS SPECTROSCOPY; SELF-ALIGNED; SINGLE-CRYSTALLINE; TEST STRUCTURE; TRANSFER LENGTH METHODS;

ELECTRIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SHEET RESISTANCE; SILICON; X RAY DIFFRACTION;

SEMICONDUCTING INDIUM;

EID: 84859342609     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.060205jes     Document Type: Article

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