Growth of highly tensile-strained Ge on relaxed Inx Ga1-x As by metal-organic chemical vapor deposition

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Bai, Yu ^a   Lee, Kenneth E ^a   Cheng, Chengwei ^a   Lee, Minjoo L ^a,b   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; FILM PREPARATION; FORMING; GALLIUM ALLOYS; GERMANIUM; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; OXIDE FILMS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; STOICHIOMETRY; SURFACES; THICK FILMS; THIN FILMS; VAPORS;

EPITAXIALLY GROWN; GE QUANTUM DOTS; GROWTH MORPHOLOGIES; HIGH MOBILITIES; HIGH QUALITIES; LOW GROWTH TEMPERATURES; MISFIT DISLOCATIONS; OPTOELECTRONIC PROPERTIES; ORGANIC CHEMICAL VAPOR DEPOSITIONS; QUANTUM DOTS; SEMI-CONDUCTORS; SEMICONDUCTOR SURFACES; SURFACE PREPARATION PROCESSES; SURFACE PREPARATIONS; SURFACE STOICHIOMETRIES;

TENSILE STRAIN;

EID: 55249099102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005886     Document Type: Article

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