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Volumn 48, Issue 11, 2009, Pages

Growth and characterization of highly tensile-strained Ge on In xGa1-xAs virtual substrate by solid source molecular beam epitaxy

(3) Hoshina, Yutaka a Yamada, Akira a Konagai, Makoto a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER METHOD; GE FILMS; IN-MOLE-FRACTION; MULTI JUNCTION SOLAR CELLS; PROMISING MATERIALS; SI-BASED OPTOELECTRONICS; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRAIN-RELAXED; STRAINED-GE; VIRTUAL SUBSTRATES;

CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM; GERMANIUM; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

TENSILE STRAIN;

EID: 73849087714 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.111102 Document Type: Article

Times cited : (19)

References (20)

1
- 0001038893
- M. V. Fischetti and S. E. Laux: J. Appl. Phys. 80 (1996) 2234.
- (1996) J. Appl. Phys , vol.80 , pp. 2234
- Fischetti, M.V.¹ Laux, S.E.²

2
- 4444260851
- J. Menëndez and J. Kouvetakis: Appl. Phys. Lett. 85 (2004) 1175.
- (2004) Appl. Phys. Lett , vol.85 , pp. 1175
- Menëndez, J.¹ Kouvetakis, J.²

3
- 77952510018
- Y. Hoshina, K. Iwasaki, A. Yamada, and M. Konagai: Jpn. J. Appl. Phys. 48 (2009) 04C125.
- (2009) Jpn. J. Appl. Phys , vol.48
- Hoshina, Y.¹ Iwasaki, K.² Yamada, A.³ Konagai, M.⁴

4
- 22944463353
- Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H.-C. Luan, J. Michel, and L. C. Kimerling: J. Appl. Phys. 98 (2005) 013501.
- (2005) J. Appl. Phys , vol.98 , pp. 013501
- Ishikawa, Y.¹ Wada, K.² Liu, J.³ Cannon, D.D.⁴ Luan, H.-C.⁵ Michel, J.⁶ Kimerling, L.C.⁷

5
- 38349028520
- M. Yamaguchi, K. Nishimura, T. Sasaki, H. Suzuki, K. Arafune, N. Kojima, Y. Ohsita, Y. Okada, A. Yamamoto, T. Takamoto, and K. Araki: Sol. Energy 82 (2008) 173.
- (2008) Sol. Energy , vol.82 , pp. 173
- Yamaguchi, M.¹ Nishimura, K.² Sasaki, T.³ Suzuki, H.⁴ Arafune, K.⁵ Kojima, N.⁶ Ohsita, Y.⁷ Okada, Y.⁸ Yamamoto, A.⁹ Takamoto, T.¹⁰ Araki, K.¹¹

6
- 34247868155
- R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam: Appl. Phys. Lett. 90 (2007) 183516.
- (2007) Appl. Phys. Lett , vol.90 , pp. 183516
- King, R.R.¹ Law, D.C.² Edmondson, K.M.³ Fetzer, C.M.⁴ Kinsey, G.S.⁵ Yoon, H.⁶ Sherif, R.A.⁷ Karam, N.H.⁸

7
- 56749091951
- Y.-Y. Fang, J. Xie, J. Tolle, R. Roucka, V. R. D'Costa, A. V. G. Chizmeshya, J. Menendez, and J. Kouvetakis: J. Am. Chem. Soc. 130 (2008) 16095.
- (2008) J. Am. Chem. Soc , vol.130 , pp. 16095
- Fang, Y.-Y.¹ Xie, J.² Tolle, J.³ Roucka, R.⁴ D'Costa, V.R.⁵ Chizmeshya, A.V.G.⁶ Menendez, J.⁷ Kouvetakis, J.⁸

8
- 45149116746
- S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai: Appl. Phys. Lett. 92 (2008) 231916.
- (2008) Appl. Phys. Lett , vol.92 , pp. 231916
- Takeuchi, S.¹ Shimura, Y.² Nakatsuka, O.³ Zaima, S.⁴ Ogawa, M.⁵ Sakai, A.⁶

9
- 55249099102
- Y. Bai, K. E. Lee, C. Cheng, M. L. Lee, and E. A. Fitzgerald: J. Appl. Phys. 104 (2008) 084518.
- (2008) J. Appl. Phys , vol.104 , pp. 084518
- Bai, Y.¹ Lee, K.E.² Cheng, C.³ Lee, M.L.⁴ Fitzgerald, E.A.⁵

10
- 52949112244
- J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, and K. M. Jones: Appl. Phys. Lett. 93 (2008) 123505.
- (2008) Appl. Phys. Lett , vol.93 , pp. 123505
- Geisz, J.F.¹ Friedman, D.J.² Ward, J.S.³ Duda, A.⁴ Olavarria, W.J.⁵ Moriarty, T.E.⁶ Kiehl, J.T.⁷ Romero, M.J.⁸ Norman, A.G.⁹ Jones, K.M.¹⁰

11
- 0034225336
- M. Mashita, Y. Hiyama, K. Arai, B.-H. Koo, and T. Yao: Jpn. J. Appl. Phys. 39 (2000) 4435.
- (2000) Jpn. J. Appl. Phys , vol.39 , pp. 4435
- Mashita, M.¹ Hiyama, Y.² Arai, K.³ Koo, B.-H.⁴ Yao, T.⁵

12
- 0003877566
- Springer, Heidelberg
- P. Y. Yu and M. Cardona: Fundamentals of Semiconductors (Springer, Heidelberg, 2001).
- (2001) Fundamentals of Semiconductors
- Yu, P.Y.¹ Cardona, M.²

13
- 0041720017
- B. A. Weinstein and M. Cardona: Phys. Rev. B 7 (1973) 2545.
- (1973) Phys. Rev. B , vol.7 , pp. 2545
- Weinstein, B.A.¹ Cardona, M.²

14
- 43949146310
- F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. V. Känel, E. Wintersberger, J. Stangl, and G. Bauer: J. Appl. Phys. 103 (2008) 093521.
- (2008) J. Appl. Phys , vol.103 , pp. 093521
- Pezzoli, F.¹ Bonera, E.² Grilli, E.³ Guzzi, M.⁴ Sanguinetti, S.⁵ Chrastina, D.⁶ Isella, G.⁷ Känel, H.V.⁸ Wintersberger, E.⁹ Stangl, J.¹⁰ Bauer, G.¹¹

15
- 0346955939
- J. W. Matthews and A. E. Blakeslee: J. Cryst. Growth 27 (1974) 118.
- (1974) J. Cryst. Growth , vol.27 , pp. 118
- Matthews, J.W.¹ Blakeslee, A.E.²

16
- 21544464728
- R. People and J. C. Bean: Appl. Phys. Lett. 47 (1985) 322.
- (1985) Appl. Phys. Lett , vol.47 , pp. 322
- People, R.¹ Bean, J.C.²

17
- 33746191700
- C. Lynch, E. Chason, and R. Beresford: J. Appl. Phys. 100 (2006) 013525.
- (2006) J. Appl. Phys , vol.100 , pp. 013525
- Lynch, C.¹ Chason, E.² Beresford, R.³

18
- 0001700240
- A. A. Williams, J. M. C. Thornton, and J. E. Macdonald: Phys. Rev. B 43 (1991) 5001.
- (1991) Phys. Rev. B , vol.43 , pp. 5001
- Williams, A.A.¹ Thornton, J.M.C.² Macdonald, J.E.³

19
- 85111791628
- ECS Trans
- A. Yamada, H. Ishihara, and K. Inoue: ECS Trans. 16 (2008) No. 10, 623.
- (2008) , vol.16 , Issue.10 , pp. 623
- Yamada, A.¹ Ishihara, H.² Inoue, K.³

20
- 21344476662
- X.-S. Wang, K. W. Self, and W. H. Weinberg: J. Vac. Sci. Technol. A 12 (1994) 1920.
- (1994) J. Vac. Sci. Technol. A , vol.12 , pp. 1920
- Wang, X.-S.¹ Self, K.W.² Weinberg, W.H.³

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