|
Volumn 98, Issue 1, 2011, Pages
|
Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BAND GAPS;
BIAXIAL TENSILE;
DIRECT TRANSITION;
GAAS;
HIGH QUALITY;
LOW TEMPERATURE PHOTOLUMINESCENCE;
MONOLITHICALLY INTEGRATED;
PL INTENSITY;
STRAINED LAYERS;
STRAINED-GE;
STRONG ENHANCEMENT;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MONOLITHIC INTEGRATED CIRCUITS;
PHOTOLUMINESCENCE;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
GERMANIUM;
|
EID: 78651289845
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3534785 Document Type: Article |
Times cited : (140)
|
References (10)
|