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Volumn 98, Issue 1, 2011, Pages

Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BIAXIAL TENSILE; DIRECT TRANSITION; GAAS; HIGH QUALITY; LOW TEMPERATURE PHOTOLUMINESCENCE; MONOLITHICALLY INTEGRATED; PL INTENSITY; STRAINED LAYERS; STRAINED-GE; STRONG ENHANCEMENT;

EID: 78651289845     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3534785     Document Type: Article
Times cited : (140)

References (10)
  • 2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.