Si tunnel transistors with a novel silicided source and 46mV/dec swing

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 121-122

  Jeon, Kanghoon ^a,b   Loh, Wei Yip ^a   Patel, Pratik ^b   Kang, Chang Yong ^a   Oh, Jungwoo ^a   Bowonder, Anupama ^b   Park, Chanro ^a   Park, C S ^a   Smith, Casey ^a   Majhi, Prashant ^a   Tseng, Hsing Huang ^c   Jammy, Raj ^a   Liu, Tsu Jae King ^b   Hu, Chenming ^b  

^a SEMATECH   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Texas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA QUALITY; DOPANT SEGREGATION; GATE STACKS; NICKEL SILICIDE; STATISTICAL EVIDENCE; SUBTHRESHOLD SWING; TUNNEL TRANSISTORS; TUNNELING FIELD-EFFECT TRANSISTORS;

SILICIDES;

FIELD EFFECT TRANSISTORS;

EID: 77957872674     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556195     Document Type: Conference Paper

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