Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Ganapathi, Kartik ^a   Yoon, Youngki ^a   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CRITICAL THICKNESS; HEAVILY DOPED; INAS; ON CURRENTS; OVERLAP REGION; QUANTUM TRANSPORT SIMULATIONS; REALISTIC DEVICES; SOURCE-TO-DRAIN TUNNELING; SUBTHRESHOLD SWING; ULTRA-SMALL;

QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM;

FIELD EFFECT TRANSISTORS;

EID: 77956192841     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3466908     Document Type: Article

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