Formation of stress-controlled, highly textured, α-SiC thin films at 950 °c

Journal of Applied Physics

Volumn 112, Issue 1, 2012, Pages

  Habermehl, S ^a   Rodriguez, M ^a   Simmons, B ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON VACANCY; DICHLOROSILANES; FILM STRESS; KINETIC MECHANISM; LOW TEMPERATURES; OUT-OF-PLANE; POLE FIGURE; POLYTYPES; RESIDUAL FILM STRESS; SIC FORMATION; SIC THIN FILMS; SOURCE GAS; STRESS MODULATION; SURFACE SATURATION; VOLUME RATIO; X-RAY DIFFRACTION DATA;

CHEMICAL VAPOR DEPOSITION; THIN FILMS; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 84864128702     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733967     Document Type: Article

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