Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Roper, Christopher S ^a,d   Radmilovic, Velimir ^b   Howe, Roger T ^c   Maboudian, Roya ^a  

^a University of California   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Stanford University   (United States)

^d Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DICHLOROSILANE; POLYCRYSTALLINE 3C-SIC FILMS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE;

THIN FILMS;

EID: 43049113904     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907871     Document Type: Article

References (21)