Deposition and properties of polycrystalline β-SiC films using LPCVD with different dopant amount

Electronics Letters

Volumn 42, Issue 13, 2006, Pages 775-777

  Noh, S ^a   Fu, X ^a   Chen, L ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; PHYSICAL PROPERTIES; SILICON CARBIDE; THIN FILMS;

LPCVD; NITROGEN DOPING; RESISTANCE RATIO;

POLYCRYSTALLINE MATERIALS;

EID: 33745474485     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060865     Document Type: Article

References (6)

1. Baliga, B.J.: ' Power semiconductor devices for variable-frequency drives ', Proc. IEEE, 1994, 82, p. 1112
2. Baliga, B.J.: ' Trends in power semiconductor devices ', IEEE Trans. Electron Devices, 1996, 43, p. 1717
3. Okojie, R.S., Ned, A.A., Kurtz, A.D., and Carr, W.N.: ' Characterization of highly doped n- and p-type 6H-SiC piezoresistors ', IEEE Trans. Electron Devices, 1998, 45, p. 785
4. Ziermann, R., Berg, J.V., Obermeier, E., Niemann, F., Moller, H., Eickhoff, M., and Krotz, G.: ' High temperature piezoresistive β-SiC-on-SOI pressure sensor with on-chip SiC thermistor ', Conf. Proc. ECSCRM'98, Montpellier, France 1998, p. 229
5. Fu, X.A., Dunning, J.L., Zorman, C.A., and Mehregany, M.: ' Polycrystalline 3C-SiC thin films deposited by dual precursor LPCVD for MEMS application ', Sens. Actuators A, 2005, 199, p. 169
6. Seo, J.Y., Yoon, S.Y., Niihara, K., and Kim, K.H.: ' Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition ', Thin Solid Films, 2002, 406, p. 138