Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species

Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 562-568

  Veneroni, Alessandro ^a   Masi, Maurizio ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Deposition mechanism; Detailed chemical kinetics; Epitaxial growth; Reactor modeling; Silicon carbide

Indexed keywords

DROP FORMATION; HYDROCARBONS; REACTION KINETICS; SILANES; SURFACE REACTIONS;

DEPOSITION MECHANISMS; DETAILED CHEMICAL KINETICS; REACTOR MODELING; SILICON DROPLETS;

SILICON CARBIDE;

EID: 33750370061     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606468     Document Type: Article

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