Selective Si etching using HCl vapor

Physica Scripta T

Volumn T114, Issue , 2004, Pages 107-109

  Isheden, C ^a   Hellstrom P E ^a   Radamson, H H ^a   Zhang, S L ^a   Stling, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; CHEMICAL VAPOR DEPOSITION; HYDROCHLORIC ACID; SURFACE REACTIONS;

ATOMIC CONCENTRATION; MASKING OXIDE;

SEMICONDUCTING SILICON;

EID: 34247183792     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2004/T114/026     Document Type: Conference Paper

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