Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Lien, Wei Cheng ^a,b   Ferralis, Nicola ^b   Pisano, Albert P ^a,c   Carraro, Carlo ^a,b   Maboudian, Roya ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESS; CUBIC SILICON CARBIDE; HIGH TEMPERATURE; HYDROGEN CHLORIDE; IN-SITU GROWTH; METHYLTRICHLOROSILANE; OUT-DIFFUSION; POROUS FILM; SI(1 0 0); SINGLE PRECURSORS; SUBSTRATE HEATING; TEMPERATURE RANGE;

ADSORPTION; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; DEPOSITION; HYDROGEN; POROUS SILICON; SILICON CARBIDE; SUBSTRATES; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70249129367     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3224895     Document Type: Article

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