Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 147-150

  Saito, Eiji ^a   Filimonov, Sergey ^b   Suemitsu, Maki ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b TOMSK STATE UNIVERSITY   (Russian Federation)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

3C SiC; High growth rate; Organosilane; ULP CVD

Indexed keywords

CRYSTALLINE MATERIALS; SILICON CARBIDE; SUBSTRATES; TEMPERATURE DISTRIBUTION;

3C-SIC; HIGH GROWTH RATE; ORGANOSILANES; PYROMETRIC INTERFEROMETRY; SI (001) SUBSTRATE; SINGLE-CRYSTALLINE 3C-SIC; TEMPERATURE DEPENDENCE; TWO-STEP PROCESS;

GROWTH RATE;

EID: 77955447392     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.147     Document Type: Conference Paper

References (15)

1. J. B. Casady and R. W. Johnson: Solid-State Electron Vol. 39 (1996), p. 1409 doi:10.1016/0038-1101(96)00045-7. (Pubitemid 126364649)
2. E. Janzen and O. Kordina: Mater. Sci. Eng. Vol. B46 (1997), p. 203 doi:10.1016/S0921-5107(96)01984-8.
3. K. Rottner, M. Frischolez, T. Myrtveit, D. Mou, K. Nordgren, A. Henry, C. Hallin, U. Gustafsson and A. Schoner: Mater. Sci. Eng. Vol. B61 (1999), p. 330 doi:10.1016/S0921-5107(98)00528-5.
4. M. Mehregany, C. A. Zorman, S. Roy, A. J. Fleischman, C. H. Wu and N. Rajan: Int. Mater. Rev. Vol. 45 (2000), p. 85 doi:10.1179/095066000101528322. (Pubitemid 32871691)
5. P. M. Sarro: Sens. Actuators A Vol. 82 (2000), p. 210 doi:10.1016/S0924-4247(99)00335-0.
6. M. Mehregany, C. A. Zorman: Thin Solid Films Vol. 355/356 (1999), p. 518 doi:10.1016/S0257-8972(99)00374-6. (Pubitemid 30523254)
7. M. Suemitsu, Y. Miyamoto, H. Handa, A. Konno: e-J. Surf. Sci. Nanotech. Vol. 7 (2009), p. 311 doi:10.1380/ejssnt.2009.311.
8. Y. Miyamoto, H. Handa, E. Saito, A. Konno, Y. Narita, M. Suemitsu, H. Fukidome, T. Ito, K. Yasui, H. Nakazawa, T. Endoh: e-J. Surf. Sci. Nanotech. Vol. 7 (2009), p. 107 doi:10.1380/ejssnt.2009.107.
9. H. Fukidome, Y. Miyamoto, H. Handa, E. Saito, and M. Suemitsu: Jpn. J. Appl. Phys., accepted for publication.
10. H. Nakazawa, M. Suemitsu, S. Asami: Thin Solid Films Vol. 369 (2000), p. 269 doi:10.1016/S0040-6090(00)00821-X.
11. H. Nakazawa, M. Suemitsu: Appl. Phys. Lett. Vol. 79 (2001), p. 755 doi:10.1063/1.1390476.
12. H. Nakazawa, M. Suemitsu: J. Appl. Phys. Vol. 93 (2003), p. 5282 doi:10.1063/1.1564861.
13. E. Saito, A. Konno, T. Ito, K. Yasui, H. Nakazawa, T. Endoh, Y. Narita and M. Suemitsu: Appl. Sur. Sci. Vol. 254 (2008), p. 6235 doi:10.1016/j.apsusc. 2008.02.190.
14. K. Senthil. H. Nakazawa, M. Suemitsu: Jpn. J. Appl. Phys. Vol. 42 (2003), p. 6804 doi:10.1143/JJAP.42.6804.
15. J.-H. Boo, S.-B. Lee, K.-S. Yu, M. M. Sung, Y. Kim: Sur. Coat. Tech. Vol. 131 (2000), p. 147 doi:10.1016/S0257-8972(00)00820-3. (Pubitemid 32007189)