Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD

Journal of Alloys and Compounds

Volumn 426, Issue 1-2, 2006, Pages 290-294

  Zheng, Haiwu ^a   Fu, Zhuxi ^a   Lin, Bixia ^a   Li, Xiaoguang ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

CVD; Sapphire substrate; SiC films; Structure

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE QUALITY; SAPPHIRE SUBSTRATES; SIC FILMS;

THIN FILMS;

EID: 33750995268     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.01.094     Document Type: Article

References (12)

1. Iwanowski R.J., Fronc K., Paszkowicz W., and Heinonen M. J. Alloys Compd. 286 (1999) 143
2. Cheng L., Steckl A.J., and Scofield J.D. J. Microelectromech. Syst. 12 (2003) 797
3. Sywe B.S., Yu Z.J., and Burckhard S. J. Electrochem. Soc. 141 (1994) 510
4. Luo M.C., Li J.M., Wang Q.M., Sun G.S., Wang L., Li G.R., Zeng Y.P., and Lin L.Y. J. Cryst. Growth 249 (2003) 1
5. Nakamatsu H., Hirata K., and Kawai S. Mater. Res. Soc. Symp. 101 (1988) 397
6. Kusumori T., Muto H., and Brito M.E. Appl. Phys. Lett. 84 (2004) 1272
7. Saddow S.E., Mynbaeva M., Smith M.C.D., and Smirnov A.N. Appl. Surf. Sci. 184 (2001) 72
8. Jeong J.K., Um M.Y., Na H.J., Kim B.S., Song I.B., and Kim H.J. Mater. Sci. Forum 389-393 (2002) 267
9. Knippenberg W.F. Philips Res. Rep. 18 (1963) 161
10. Germain V., Li J., Ingert D., Wang Z.L., and Pileni M.P. J. Phys. Chem. B 107 (2003) 8717
11. Zheng H.W., Zhu J.J., Fu Z.X., Lin B.X., and Li X.G. J. Mater. Sci. Techol. 21 (2005) 536
12. Wee A.T.S., Li K., and Tin C.C. Appl. Surf. Sci. 126 (1998) 34