Stress control of polycrystalline 3C-SiC films in a large-scale LPCVD reactor using 1,3-disilabutane and dichlorosilane as precursors

Journal of Micromechanics and Microengineering

Volumn 16, Issue 12, 2006, Pages 2736-2739

  Roper, Christopher S ^a   Howe, Roger T ^b   Maboudian, Roya ^a  

^a University of California   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; FILMS; RESIDUAL STRESSES; SILICON CARBIDE; SILICON WAFERS;

DICHLOROSILANE (DCS); GAS MIXTURE; STRAIN GRADIENTS; STRESS CONTROL;

POLYCRYSTALLINE MATERIALS;

EID: 33846113316     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/16/12/029     Document Type: Article

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