Effect of reduced pressure on 3C-SiC heteroepitaxial growth on Si by CVD

Chemical Vapor Deposition

Volumn 12, Issue 8-9, 2006, Pages 495-501

  Ishida, Yuuki ^a   Takahashi, Tetsuo ^a   Okumura, Hajime ^a   Arai, Kazuo ^a   Yoshida, Sadafumi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

3C SiC; APCVD; Atomic hydrogen; Growth mode; LPCVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DEFECTS; NUCLEATION; SILICON CARBIDE;

ATOMIC HYDROGEN; GROWTH MODE; MOLE FRACTION; PLANAR DEFECTS;

EPITAXIAL GROWTH;

EID: 33845579698     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506464     Document Type: Article

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