A SiC MEMS resonant strain sensor for harsh environment applications

IEEE Sensors Journal

Volumn 7, Issue 4, 2007, Pages 568-576

  Azevedo, Robert G ^a   Jones, Debbie G ^a   Jog, Anand V ^a   Jamshidi, Babak ^a   Myers, David R ^a   Chen, Li ^b   Fu, Xiao An ^b   Mehregany, Mehran ^b   Wijesundara, Muthu B J ^a   Pisano, Albert P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Case Western Reserve University   (United States)

Author keywords

Carbide; Extensometer; Gauge; Harsh environment; MEMS; Resonator; SiC; Silicon; Strain

Indexed keywords

ATMOSPHERIC PRESSURE; CARBIDES; DILATOMETERS; GAGES; MEMS; NATURAL FREQUENCIES; RESONATORS; SILICON; SILICON CARBIDE; SILICON OXIDES; STRAIN;

DOUBLE-ENDED TUNING FORKS; HARSH ENVIRONMENT; SIC; SILICON OXIDE MASKS; SILICON SUBSTRATES; STATE OF THE ART; STRAIN RESOLUTION; STRAIN SENSITIVITY;

EPITAXIAL GROWTH;

EID: 84945126978     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2007.891997     Document Type: Article

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