Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 212-216

  Avila, A ^a   Montero, I ^a   Galan L ^b   Ripalda, J M ^b   Levy, R ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000466537     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1332796     Document Type: Article

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