Towards large area (111)3C-SiC films grown on off-oriented (111)Si

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 149-152

  Severino, A ^a,b   Anzalone, R ^a,b   Bongiorno, C ^a   Italia, M ^a   Abbondanza, G ^c   Camarda, M ^a   Perdicaro, L M S ^c   Condorelli, G ^c   Mauceri, M ^c   La Via, F ^a  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c Epitaxial Technology Center   (Italy)

Author keywords

3C SiC single crystal; Large area wafers; Measured stress; Off axis Si substrate

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; STACKING FAULTS; SUBSTRATES;

3C-SIC FILMS; FILM QUALITY; LARGE-AREA WAFERS; MISCUT ANGLE; POLE FIGURE; SI SUBSTRATES; SIC SINGLE CRYSTALS; STACKING FAULT DENSITY;

SILICON WAFERS;

EID: 79251576815     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.149     Document Type: Conference Paper

References (7)

1. K. Shibahara, S. Nishino, H. Matsunami: J. Cryst. Growth Vol. 78 (1986), p. 538 doi:10.1016/0022-0248(86)90158-2.
2. J. A. Powell, L. G. Matus, M. A. Kuczmarski et al.: Appl. Phys. Lett. Vol. 51 (1987), p. 823 doi:10.1063/1.98824.
3. M. Zielinski, M. Portail, T. Chassagne et al.: MRS Spring Symposyum, (2008).
4. F. La Via, S. Leone, M. Mauceri et al.: Material Science Forum Vol. 556-557 (2007), p. 157 doi:10.4028/www.scientific.net/MSF.556-557.157.
5. E. Polychroniadis, M. Syvajarvi, R. Yakimova et al.: J. Cryst. Growth Vol. 263 (2004), p. 68 doi:10.1016/j.jcrysgro.2003.10.092.
6. A. Boulle, D. Chaussende, L. Latu-Romain et al.: Appl. Phys. Lett. Vol. 89 (2006), p. 091902 doi:10.1063/1.2338787. (Pubitemid 44334906)
7. M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne: Appl. Phys. Lett. Vol. 89 (2006), p. 131906 doi:10.1063/1.2357569. (Pubitemid 44488498)