Electrical and mechanical characterization of doped and annealed polycrystalline 3C-SiC thin films

Journal of the Electrochemical Society

Volumn 156, Issue 1, 2009, Pages

  Roper, Christopher S ^a,d   Radmilovic, Velimir ^b   Howe, Roger T ^c   Maboudian, Roya ^a  

^a University of California   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Stanford University   (United States)

^d Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; DISTRIBUTED PARAMETER NETWORKS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; INERT GASES; MECHANICAL PROPERTIES; OXYGEN; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STRENGTH OF MATERIALS; THICK FILMS; THIN FILMS;

APPLICATIONS.; ARGON AMBIENT; DEPOSITED FILMS; DICHLOROSILANE; DISILABUTANE; DOPANT PRECURSORS; DOPING CONCENTRATIONS; ELECTRICAL PROPERTIES; ELECTRICAL RESISTIVITIES; MECHANICAL CHARACTERIZATIONS; NANOELECTRO-MECHANICAL SYSTEMS; NEGATIVE VALUES; OXYGEN DIFFUSIONS; POLYCRYSTAL LINES; RESISTIVITY VALUES; SIC THIN FILMS; STRAIN GRADIENTS; TWO SOURCES;

STRESSES;

EID: 56749155960     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3000002     Document Type: Article

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