A comparative study of the morphology of 3C-SiC grown at different C/Si ratios

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 153-156

  Attolini, G ^a   Watts, B E ^a   Bosi, M ^a   Rossi, F ^a   Riesz, F ^b  

^a IMEM CNR   (Italy)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

C:Si ratio; Makyoh topography; Surface morphology; Vapour phase epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH RATE; SCANNING ELECTRON MICROSCOPY; SURFACE DEFECTS; SURFACE MORPHOLOGY; TOPOGRAPHY;

3C-SIC FILMS; C/SI RATIO; COMPARATIVE STUDIES; EPIWAFERS; GRAIN SIZE; MAKYOH TOPOGRAPHIES; SILANE PRECURSOR; VAPOUR PHASE EPITAXY;

SILICON CARBIDE;

EID: 79251556860     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.153     Document Type: Conference Paper

References (6)

1. G. Attolini, M. Bosi, B. E. Watts, F. Leccabue, T. Besagni, G. Salviati, C. Frigeri, C. Ferrari, S. Kaciulis and L. Pandolfi: IMEM-CNR internal report Vol. 111 (2006).
2. F. Riesz: Proc. SPIE Vol. 5458 (2004), p. 86 doi:10.1117/12.546018.
3. T. Chassagne, G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil and J. Bouix: Thin Solid Films Vol. 402 (2002), p. 83 doi:10.1016/S0040-6090(01)01597- 8. (Pubitemid 34089147)
4. M. D. Allendorf and R. J. Kee: J. Electrochem. Soc. Vol. 138 (1991), p. 841 doi:10.1149/1.2085688.
5. C-F. Wang and D-S. Tsai: Mater. Chem. Phys. Vol. 63 (2000), p. 196 doi:10.1016/S0254-0584(99)00207-2. (Pubitemid 32212853)
6. Y. Kim, J. K. Choi, J-T. Choi and K. H. Auh: Mater. Lett. Vol. 4-5 (1996), p. 249 doi:10.1016/0167-577X(95)00228-6.