Residual stress characterization of polycrystalline 3C -SiC films on Si(100) deposited from methylsilane

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Liu, Fang ^a,b   Carraro, Carlo ^b   Chu, Jiaru ^a   Maboudian, Roya ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; DEPOSITION PARAMETERS; DEPOSITION PRESSURES; DICHLOROSILANE; GRAIN SIZE EFFECT; LOW STRESS; METHYLSILANE; POLYCRYSTALLINE 3C-SIC; SI(1 0 0); STRAIN GRADIENTS; STRESS VALUES; TEMPERATURE RANGE; THERMAL MISMATCH; YOUNG'S MODULUS;

DEPOSITION; RESIDUAL STRESSES; SILICON CARBIDE; SILICON WAFERS; STRENGTH OF MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650711646     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3157184     Document Type: Article

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