Room-temperature wet etching of polycrystalline and nanocrystalline silicon carbide thin films with hf and hn O3

Journal of the Electrochemical Society

Volumn 156, Issue 3, 2009, Pages

  Roper, Christopher S ^a,c   Howe, Roger T ^b   Maboudian, Roya ^a  

^a University of California   (United States)

^b Stanford University   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED PARAMETER NETWORKS; ELECTRODEPOSITION; ETCHING; GRAIN SIZE AND SHAPE; HYDROFLUORIC ACID; NANOCRYSTALLINE SILICON; OZONE WATER TREATMENT; PHOTORESISTS; SILICON CARBIDE;

DEVICES FOR HARSH ENVIRONMENTS; DICHLOROSILANE; ETCH RATES; ETCHED SURFACES; FIRST-ORDER DEPENDENCES; GRAIN SIZES; KINETIC MODELS; LOW-PRESSURE CHEMICAL VAPOR DEPOSITIONS; MIXED ACIDS; NANO-CRYSTALLINE; NANO-ELECTRO-MECHANICAL SYSTEMS; NEW PROCESS; POLY-CRYSTALLINE; POLYCRYSTALLINE 3C-SIC; POWER-LAW DEPENDENCES; ROOM TEMPERATURES; SIC FILMS; SILICON CARBIDE THIN FILMS; SILICON CONCENTRATIONS; WET-ETCH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59349114311     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3061944     Document Type: Article

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