Kinetics of halide chemical vapor deposition of silicon carbide film

Journal of Crystal Growth

Volumn 308, Issue 1, 2007, Pages 189-197

  Wang, Rong ^a   Ma, Ronghui ^a  

^a Baltimore County   (United States)

Author keywords

A1. Gas phase reaction; A1. Numerical simulation; A1. Surface chemistry; A3. Halide chemical vapor deposition; B1. Silicon carbide film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; GAS MIXTURES; GROWTH RATE; SILICON CARBIDE; SURFACE CHEMISTRY;

GAS-PHASE REACTION; HALIDE CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE FILMS; SURFACE KINETICS;

EPILAYERS;

EID: 34748832783     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.038     Document Type: Article

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