Effects of channel widths, thicknesses of active layer on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl) pentacene transistors by thermal evaporation method: Comparison study

Synthetic Metals

Volumn 162, Issue 13-14, 2012, Pages 1210-1239

  Yakuphanoglu, Fahrettin ^a   Gunduz, Bayram ^b  

^a FIRAT UNIVERSITY   (Turkey)

^b MU ALPARSLAN UNIVERSITY   (Turkey)

Author keywords

Effect of channel width; Photoresponsivity; TIPS pentacene transistor

Indexed keywords

ACTIVE LAYER; CHANNEL WIDTHS; COMPARISON STUDY; ELECTRICAL CHARACTERISTIC; GRAIN SIZE; INTERFACE TRAP DENSITY; MORPHOLOGY PARAMETERS; PENTACENE THIN-FILM TRANSISTORS; PENTACENE TRANSISTORS; PHOTORESPONSES; PHOTORESPONSIVITY; SUBTHRESHOLD SWING; THERMAL EVAPORATION METHOD; THERMAL EVAPORATION TECHNIQUE; TIPS-PENTACENE; TRAP DENSITY; WHITE-LIGHT ILLUMINATION;

ELECTRIC PROPERTIES; THERMAL EVAPORATION; THIN FILM TRANSISTORS; TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84862859358     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2012.04.034     Document Type: Review

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