Tunneling current in polycrystalline organic thin-film transistors

Advanced Functional Materials

Volumn 13, Issue 1, 2003, Pages 53-60

  Horowitz, Gilles ^a,b  

^a UNIVERSITÉ PARIS DIDEROT   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON TRAPS; ELECTRON TUNNELING; EVAPORATION; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; LEAST SQUARES APPROXIMATIONS; POISSON EQUATION; POLYCRYSTALLINE MATERIALS;

SCHOTTKY BARRIERS;

THIN FILM TRANSISTORS;

EID: 0037287459     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/adfm.200390006     Document Type: Article

References (43)

1. H. Koezuka, A. Tsumura, T. Ando, Synth. Met. 1987, 18, 699.
2. J. H. Burroughes, C. A. Jones, R. H. Friend, Nature 1988, 335, 137.
3. R. Madru, G. Guillaud, M. Al Sadoun, M. Maitrot, J. J. André, J. Simon, R. Even, Chem. Phys. Lett. 1988, 145, 343.
4. G. Horowitz, D. Fichou, X. Z. Peng, Z. G. Xu, F. Gamier, Solid State Commun. 1989, 72, 381.
5. For a recent review see: C. D. Dimitrakopoulos, P. R. L. Malenfant, Adv. Mater. 2002, 14, 99.
6. Y. Y. Lin, A. Dodabalapur, R. Sarpeshkar, Z. Bao, W. Li, K. Baldwin, V. R. Raju, H. E. Katz, Appl. Phys. Lett. 1999, 74, 2714.
7. G. H. Gelinck, T C. T. Geuns, D. M. de Leeuw Appl. Phys. Lett. 2000, 77, 1487.
8. A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, J. Rogers, Appl. Phys. Lett. 1998, 73, 142.
9. H. Sirringhaus, N. Tessler, R. H. Friend, Science 1998, 280, 1741.
10. K. Waragai, H. Akimichi, S. Hotta, H. Kano, H. Sakaki, Phys. Rev. B 1995, 52, 1786.
11. M. C. J. M. Vissenberg, M. Matters, Phys. Rev. B 1998, 57, 12964.
12. N. Karl, J. Marktanner, R. Stehle, W. Warta, Synth. Met. 1991, 42, 2473.
13. J.H. Schön, S. Berg, C. Kloc, B. Batlogg, Science 2000, 287, 1022.
14. E. A. Silinsh, G. A. Shlihta, A. J. Jurgis, Chem. Phys. 1989, 138, 347.
15. G. Horowitz, R. Hajlaoui, P. Delannoy. J. Phys. III 1995, 5, 355.
16. M. Shur, M. Hack, J. G. Shaw, J. Appl. Phys. 1989, 66, 3371.
17. S.F. Nelson, Y. Y. Lin, D. J. Gundlach, T. N. Jackson, Appl. Phys. Lett. 1998, 72, 1854.
18. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, D. M. de Leeuw, Nature 1999, 401, 685.
19. J. H. Schön, C. Kloc, Z. N. Bao, B. Batlogg, Adv. Mater 2000, 12, 1539.
20. F. Biscarini, R. Zamboni, P. Samori, P. Ostoja, C. Taliani, Phys. Rev. B 1995, 52, 14868.
21. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, D. G. Schlom, IEEE Electron. Device Lett. 1997, 18, 87.
22. G. Horowitz, M. E. Hajlaoui, Adv. Mater. 2000, 12, 1046.
23. T. W. Cal, C. D. Frisbie, J. Phys. Chem. B 2001, 105, 4538.
24. J. H. Schön, C. Kloc, A. Dodabalapur, B. Crone, Appl. Phys. Lett. 2001, 79, 3965.
25. J. H. Schön, C. Kloc, Appl. Phys. Lett. 2001, 78, 3821.
26. G. E. Pike, C. H. Seager, J. Appl. Phys. 1979, 50, 3414.
27. J. W. Orton, M. J. Powell, Rep. Prog. Phys. 1980, 43, 1263.
28. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, M. Rider, J. Appl. Phys. 1982, 53, 1193.
29. P. S. Lin, J. Y. Guo, C. Y. Wu, IEEE Trans. Electron. Dev. 1990, 37, 666.
30. H. S. Kong, C. Lee, J. Appl. Phys. 1995, 78, 6122.
31. G.Y. Yang, S. H. Hur, C. H. Han, Trans; IEEE Electron Devices 1999, 46, 165.
32. F.V. Farmakis, J. Brini, G. Kamarinos, C. T. Angelis, C. A. Dimitriadis, M. Miyasaka, IEEE Trans. Electron Devices 2001, 48, 701.
33. G. Horowitz, B. Bachet, A. Yassar, P. Lang, F. Demanze, J. L. Fave, F. Garnier, Chem. Mater. 1995, 7, 1337.
34. J. Monteath Robertson, V. C. Sinclair, J. Trotter, Acta Crystallogr. 1961, 14, 697.
35. D. Fichou, B. Bachet, F. Demanze, I. Billy, G. Horowitz, F. Gamier, Adv. Mater. 1996, 8, 500.
36. J. Cornil, D. Beljonne, J. L. Brédas, J. Chem. Phys. 1995, 103, 842.
37. C. Ehrendorfer, A. Karpfen, J Phys Chem 1994, 98, 7492.
38. G. Burns, Solid state physics, Academic Press, London 1985.
39. Strictly speaking, this situation is only true when the Debye length is large as compared to the grain size. However, the doping level in organic semi-conductors is so low, and the corresponding Debye length so high, that we can reasonably assume this condition to be always fulfilled.
40. J. H. Schön, C. Kloc, B. Batlogg, Org. Electron. 2000, 1, 57.
41. C.B. Duke, Tunneling in solids, Academic Press, New York 1969.
42. G. Horowitz, M. E. Hajlaoui, R. Hajlaoui, J. Appl. Phys. 2000, 87, 4456.
43. The fitting was carried out using the software KaleidaGraph (® Synergy Software).